On the basis of studying the process of joint electrodeposition of rhenium with chalcogenides there was elaborated the process of production of the semi conductive alloys of rhenium chalcogenides Re-X(X=S, Se, Te) by electro deposition method on various metal substrates, produced from alkali and acid electrolytes in the wide range of components correlation. Static and dynamic voltamperic characteristics of diode structure have been tested on the base of thin coverings and it was established that diode structures possess polar-defendant effect of switch over and memory. Such properties can be applied in making semi conductive devices. Photo electrochemical activity of thin coverings of rhenium chalcogenides was studied and it was proposed to use these films as a photo electrode material while converting of solar energy into chemical one.

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