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The first website in Azerbaijan (created in 1995)
Address:

33, H.Javid ave., Baku, Azerbaijan, Az-1143

Phone:

(994 12) 4394151

Fax:

(994 12) 4395961

Email:

azhep@physics.ab.az

Executed Director post: Gajar Chingiz Oveis oglu
Doctor of Physics and Mathematics, Active member of ANAS
Phone: (994 12) 4387646 Fax: (994 12) 4393116
Email: director@physics.ab.az
Deputy directors:

Abdinov Javad Shahvaled oglu

Doctor of Physical and Mathematical Sciences, Correspondent member of ANAS

Kamil Bakhtiyar oglu Kurbanov
Ph.D. in Physical and Mathematical Sciences

Scientific secretary: Zaur Ismail oglu Suleimanov
Ph.D. in Physical and Mathematical Sciences
Phone: (994 12) 4397423
Main area of activity of organization:
  1. Physics of solid, states  technical and physical basis of optoelectronics;

  2. Nuclear physics;

  3. Physical and  technical problems of energetic.

Main scientific achievements made over the last five years:

Kinetic and optic properties as well as structural transformations in wide range of semiconductor materials - A4, A3B5, A5B5, metals chalcogenids were investigated and new galvanomagnetic and tenzometric transducers were created.
The dependence of electrons, light and heavy holes for A3B5 and A2B6 semiconductor and semimetal spherical giant points on giant point radius was determined.
The technology of making of crystallization resistant photosensitive glass semiconductor chalcogen system (Se-As, Se-Te) patterns on the basis of Se was developed.
Researches on physics, technology and techniques of high resistant and wide CaGa2S, CdGa2S4, ZnGa2S4 and other chalcogenid semiconductors determined, that the above - mentioned are prospective for creating the light sources, light receivers, nonlinear optic transducers, electrophotografic layers and eds.
New thermoemission galvanomagnetic effects has been found, the physical basis have been established of fabricating of radiation-resistant photodetectors with the thermoelectric cooler for the 0,45-14 um range of the spectrum, high-effective thermo- and magnetothermoelectrics materials and coolers, new plasma-optical system of extraction of ions, new non-destructive method for the complete diagnostic of the optoelectronic device, their experimental samples have been produced and tested.
On the basis of metal-porous silicium high frequency detectors, determining humidity, hydrogenium, carbon oxide as well as nine batteries were made.
At drawing on surface Si of solar elements (SE) of 2 layers covering ZnS+Nd2O3 the photocurrent increases for 60% and the efficiency (r|) to 15% (for SE without a covering r|=9,3%).
Acoustoptical delay lines, the acoustoptical panoramic receiver and the acoustoptical agreed filter.
A number of work on revealing cumulative increase were developed of the over voltages, arised in high voltage nonlinear electrical networks were carried out.
On the basic of piezoelectric, photoresistive, photovoltaic and electroluminescent composites the following transducers of various purposes were developed: acoustic, acoustical-optical, photoelectrical and acousto-electron.
Tests of "ATLAS" setting's End cap colorimeter and Monte Carlo calculations of particles with different quark structure birth processes were carried out.

Brief information on the organization’s history:

Institute of physics and Mathematics was founded in 1945 on the base of Physics Sector of Azerbaijan Department of Trans-Caucasian Branch of USSR Academy of Sciences working from 1932. The Institute gave birth to: the Institute of Mathematics  and Mechanics (1959), Institute of Cybernetics(1960).
Economic unions: Scientific Association Union "Selen", Special Design Technological Office "Registr", Cryogenic Station (liquid nitrogen is obtained for conducting investigations at low temperatures).

Total number of employees:

853

Information about structural units of the organization:

Laboratory "Transfer Phenomena in Semiconductors"

Laboratory "Narrow Band Semiconductors and High Temperature Superconductors"

Laboratory of Nanostructures in Semiconductors

Laboratory "Theory of Solid States"

Laboratory "Resonance Phenomena in Solid State"

Laboratory "Physics of Non-crystalline Semiconductors"

Laboratory "Optoelectronics"

Laboratory "Heterostructure"

Laboratory "Electronoqraphie"

Laboratory "Diffusion Phenomena"

Laboratory "Photoelectronic and Optic Transducers"

Laboratory "Physics of Nonequilibrium Electron Processes in Semiconductors"

Laboratory "Electron Spectroscopy of Semiconductors"

Laboratory "Electrophotography"

Laboratory "Quantum Electronics of Semiconductors"

Laboratory "Molecular Spectroscopy"

Laboratory "Electronics of Solid State"

Laboratory "Infra-red Photoelectronics and Plasma Phenomena"

Laboratory "Diagnostics of Surface Epitaxial and Metal-ceramic Structures"

Laboratory "Acoustooptics"

Laboratory "Crystal Physics"

Laboratory "Material Studies"

Laboratory "Optic and Photoelectric Diagnostics of Semiconductor Structures "

Laboratory "Nuclear Investigations"

Laboratory "Physics of High Energy"

Laboratory "Physics of Cosmic Ray Sourses"

Laboratory "Termodinamics of Physical and Chemical Processes"

Laboratory "Physics and Technique of High-voltages"

Laboratory "Physics of Composite Structures"

Laboratory "Ecological Biophysics"

Laboratory "Specialized Non-standard Systems of Control and Quality"

Department "Intellectual System of Receipt, Processing"

Department "Intellectual Properties in Introduction"

Department "Patent Work"

Department "Encyclopedic investigations of Physical and Technical Processes Terms and Texts and their Compiling"

Department "Technology of nan dimensional materials and structures"

Laboratory "Chaos in dynamical systems"

 

Doctors of Sciences

 

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