Construction and producing technology of radiation proof photo receivers, operating in 0,45-1,1 mom spectral region on the basis of GaSe, InSe and GaTe single crystals of layered structure have been developed. For the first time physical foundations of construction of thermoelectrically cooled radiation proof photodiodes, operating 0,6-1,1 mcm spectral region possessing high parameters have been developed on the basis of InSe single crystals. Radiation resistance of diodes obtained to different kinds of penetrating radiation has been studied and systematized.

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2. Askerov K.A. Influence of ionizing radiation on the basic parameters of photodiodes on the base of indium selenide.||International Conference on Photoelecktronics and Night Vision Devices 28-30 October 1998. Moscow, Russia, p. 76-79

3. Askerov K.A. Influence of the ionizing irradiation on the basic characteristics of cooled photo resistors on the Cd_XHg_1-XTe basis. "Physics", National Academy of Science of Azerbaijan, 2000, t.3, №4, pp.20-24