The ground-state energy spectrum of wide range deep and shalloy impurities in Ge-Si alloys has been experimentally determined on the basis of Hall measurements.

The main scattering mechanisms for electrons and  holes in Ge-Si single crystals were determined in wide temperature range.

Random alloy splitting of deep impurity levels due to different composition and srtucture of nanovolumes surrounding of the defect core in the Ge-Si alloy crystals is observed.

New techniques have been developed to grow binary alloy crystals with desired composition and impurity distribution by modified Czochralski and Bridgman methods.

Under the extreme quantum limit conditions in a longitudinal magnetic field and when impurity scattering predominates a large negative magnetoresistance in III-V semiconducting compounds is observed.

1. Deep Impurity Levels in Ge-Si Alloys - Solid State Communication, 111 (1999), pp. 675-679

2. Distribution of components in Ge-Si bulk single crystals grown under the continuous feeding of the melt with the second component - Journal of Crystal Growth, 226 (2001), pp. 437-442

3. Distribution of components in Ge-Si bulk crystals grown by the zone leveling method - Chinese Journal of Physics, 41(2003), pp.79-84

4. Growth of Homogeneous Single Crystals of GeSi Solid Solutions Using a Ge seed by the Modified Bridgman Method - Crystallography Reports, 50, Suppl. 1 (2005), pp. S149-151

5. Segregation of Aluminum and Indium Impurities in Ge-Si Crystals - Inorganic Materials, 43 (2007), pp. 3-7

Institute of Physics of ANAS, 33, H.Javid ave., Baku, Azerbaijan, Az-1143