There have been first found out EPR absorption in Se and nature of the phenomenon is established. Mechanism formation and decay paragnetic centres have been studied, its thermodynamic description ids given.

There have been first shown existence of spontaneous over molecular formations in Se the size≈10^-4cm. There have been offered model of liquid (amorphous) phase structure, on which base we can explain mechanisms of paragnetic centre formations, crystallization, single crystal growth of trigonal modification from melt, origination of barriers, extreme dependence of physical properties on impurity concentration and other specific peculiarities of Se.

There have been first established existence of characteristic temperature (θ=470°±20°C) for Se, above which chain structure of molecules is destroyed, that are displayed in sharp change of physical properties of melt (viscosity, electroconductivity, Para magnetism and etc.)

There have been established correlation between temperature and time changes of structure and properties of liquid Se. There have been carried out analysis of conductivity of liquid Se within Molt-Cohen model with the expense of temperature change of melt structure. It is shown that to T<θ conductivity has impurity nature and jumping mechanism of transfer in localized states is carried out, at T>θ transition to intrinsic conductivity and diffusion mechanism of transfer is taken place.

There have been first revealed nature of structural memory of Se. It is established that depending on thermal treatment regime there have been taken place as reversible as irreversible changes of structure. Under the conditions of isothermal heating at given Ttreat these changes are completed by structure stabilization for ttreat≥3hours and formed structure can be only changed by thermal treatment at higher Ttreat.

There have been first established critical cooling speed of Se from T≥θ (Vo=1K/s) above which structural and relaxation process can not be completed and the structure of amorphous phase is determined by cooling rate. It is shown that thermal treatment regime changing the impurity state and over molecular structure influences substantially on the properties of Se.

There have been studied mechanism of donor and acceptor interaction of a number of main impurities in polymer matrix of Se and state of O, halogens, Mn and TL is established, mobility of TL ions in Se is determined.

There have been explained hysteresis phenomena during temperature dependence of conductivity of liquid Se which are due to incompleteness of structure formation process. It is shown that reversible temperature dependence of conductivity is maintained after stabilization of melt structure.

Detection of change transfer states in Se and determination of their nature favor origination of new trend in Se investigation based on the change of atom states as a result of charge transfer between them (alternating bond and D°, D⁺, D^- centres).

There have been created a number of new electrophotographyc layers on the base of Se and its compounds that are verified by 16 inventor's certificates of issuing and 1 patent for invention. Part of results is introduced into production of selenium electrophotographyc layers (p/b Г-4602, GPO "Orgtekhnika" MPCA and  SU of USSR). [In Russian (п/я Г-4601, ГПО "Оргтехника" МПСА и СУ СССР)