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The first website in Azerbaijan, created in 1995

Place of Birth: Azerbaijan Republic, Kazakh district, Aslanbeyli village

 

Date of Birth:

02.06.1950

Education:

Azerbaijan State Pedagogical Institute, physicist

Scientific degree:

Doctor of Physical and Mathematical Sciences

Title:

Leading scientific researcher

Speciality code and title for doctoral dissertation:

01.04.07 - Condensed Matter Physics, Electron processing in eutectic compositions semiconductor-metal

Total number of scientific publications: 100
Number of scientific publications printed abroad: 70
Number of patents and certificates of authorship: 3
Main scientific achievements:

Scientific works of G.I. Isakov are facilitated development of a number of scientific directions in physics:

1. Investigations into classical electronic processes and determination of their mechanisms in semiconductor-metal   eutectic compositions.

2. Investigations into quantum electronic processes and determination of their mechanisms in semiconductor-superconductor   eutectic compositions.

3. Control over classical and quantum electronic processes in semiconductor-metal and semiconductor-superconductor eutectic compositions.

4. Practical application of semiconductor-metal and semiconductor-superconductor eutectic compositions.

5. Investigation of hydrogenated amorphous silicon films, silicon germanium solid       solutions.

6.  Investigation of solar cells on the basis of hydrogenated amorphous silicon films, silicon - germanium solid solutions.

First in the world were  observed following major scientific and practical results:

- In semiconductor-metal micro- and nanocomposite eutectics, classical and quantum electron process mechanisms have been determined.

- In the new class of composition system, relating to the type of semiconductor-superconductor compositions, the Josephson effect has been revealed and mechanisms of this effect in such structures have been determined.

- In semiconductor-metal, semiconductor-superconductor eutectic compositions, models of discontinuous, finite and infinite clusters have been developed.

- In semiconductor-metal eutectic compositions, classical and quantum percolation effects have been revealed and their mechanisms have been determined.

- In  semiconductor-superconductor super current passing models at low volume values of the superconducting phase have been developed.

-In  semiconductor-superconductor eutectic compositions Space and energy models of discontinuous, finite and infinite Josephson clusters have been developed.

- On a base of semiconductor-metal eutectic compositions, unique strain gauges have been developed, general rules of control over the coefficient of sensibility   have been determined.

- In  semiconductor-metal, semiconductor-superconductor eutectic compositions, general rules of control over classical and quantum effects have been determined.

- In  semiconductor-superconductor eutectic compositions, it has been determined control over Josephson effect parameters.

- In  semiconductor-superconductor eutectic compositions it has been obtained a formula, enabling one to determine the Josephson radiation frequency, numbers of Josephson weak couplings and Josephson clusters.   

- It has been obtained productability structure for Solar Cells making  on basis amorphous hydrogenated  solid solution silicon-germanium.

Prepared:
of candidates: 2
of doctors:
Scientific interests:

Electron and phonon processing in nano and mikromodifications semiconductors, metals and insulators, mechanisms super deep penetration effect in semiconductors, metals and insulators, hydrogen energy, Solar energy, ecology problems soil, water, atmospheric, material science for hydrogen and Solar energy. 

Titles of main five scientific publications:
  1. G.I. Isakov  JETP, 2004, V.126,  №4(10), pp.915-925.

  2. G.I. Isakov  Technical Physics Letters, 1996, V.22, №24, pp.71-74.

  3. G.I. Isakov  Technical Physics Letters, 2003, V.29, №19, pp.40-47.

  4. G.I. Isakov  Technical Physics Letters, 2005, V.31, №5, pp.67-75.

  5. G.I. Isakov  Semiconductors, 2005, V.39, №7, pp.772-775.

  6. G.I. Isakov  Inorganic materials, 2003, V.39, №6, pp.677-685.

  7. G.I. Isakov  ISJAEE, 2005, №2(22), pp.49-55.

Membership with international and foreign organizations:
  1.  Academician of the European Academy of Natural Sciences, (Germany)

  2. Deputy Chairman of Branch of Alternative Energy and Ecology European Academie of Natural Sciences (Germany)

  3. Member of International Board, International Scientific Journal for "Alternative Energy and Ecology" (Russia)

  4. Deputy Editor-in-Chief, International Scientific Journal for "Alternative Energy and Ecology, " (Russia).

  5. Academician of New York Academy Sciences(USA)

Award:

Awarded of the Honorary Rontgen Medal the European Academy Natural Sciences (Germany).

Educational activity:
Position:

Leader Scientifics Researcher

Place of work and its address: Institute of Physics of ANAS, 33, H.Javid ave., Baku, Azerbaijan, Az-1143
Office phone:

(99412) 5393416

Home phone:

(994 12) 5630574

Mobile phone:

(994 55) 6613206

E-mail: gudrat.isakov@gmail.com gudrat@physics.ab.az