There have been revealed an important role of acceptor and donor impurities in the formation  of conduction type, values of charge carrier concentration and mobility in polymer semiconductors and dielectrics. Conditions of their change by the change of volume share of crystalline phase and impurity content are found. There have been found out jumplibe increase of thermal conductivity of polymer semiconductors and dielectrics is going from glasslike state into high-elastic one and the mechanism of their explanation is suggested.

There have been established mechanism of Se crystallization and systems on Se - based effect of impurity and pressure on their crystallization.

There have been developed recommendations for principal change of structure and properties of linear polymer semiconductors and dielectrics.

1. Determination of Oxygen content in selenium. Phys.Stat.sol.k.113-116, 1966

2. Amorphous selenium thermal conductivity study in softening region. Phys.Lett, №3, 23, 215-216, 1966

3. O происхождении дырочной проводимости селена.  ДАН СССР, т.194, №4, 1970

4. Improvement of charge transport in Se-As glasses by doping with halogens. Non.Cryst.sol, 167, 65-69, 1994

5. Развитие физики селена. Книга, Изд. "Элм", АН.Азерб., 2000

Baku State University