Doctor of Physical and Mathematical Sciences

On the base of carried out an extensive cycle of works on physics of  it chalcogenide A^IIIB^VI and TlB^IIIC₂^VI type semiconductors it was established the regularities of relaxation electron processes. The observed new physical phenomena - hopping flowing of injection currents on localized states in the forbidden gap of semiconductors at different external effects (temperature, direct and alternate electric fields, pressure, laser and roentgen irradiation) in A^IIIB^VI and TlB^IIIC₂^VI type bulk and thin film semiconductors are explained and the perspective regions of their practical application are determined. Obtained results are used for determination of physical characteristics of A^IIIB^VI and TlB^IIIC₂^VI semiconductors. New semiconductor devices are created: the accumulator; the detector of pressure of gas medium; the receiver of optical radiation; the accumulating cells; photo - and roentgen sensitive resistors.

1. Mustafaeva S.N. Influence of intercalation on electrical and photoelectrical properties of ternary and chain and layer semiconductors. Materials of chemistry and Physics. 1995. V. 40. №2. P.142-145.

2. Mustafaeva S.N. Production and switching effect in amorphous GaSe thin films. Неорганические материалы, 1996, v.32, №9, p.1078-1082

3. Mustafaeva S.N. et al. Exciton characteristics of TlInSе₂ single crystals. Fiz. Techn. Poluprov. 1998, v.32, №2, pp.145-147

4. Mustafaeva S.N. Anisotropy of hopping conductivity in TlGaSe₂ single crystals. Fiz. Tverdogo Tela. 1998, v.40, №1, pp.48-51

5. Mustafaeva S.N. Exciton characteristics of Tl_1-xCu_xInS₂ single crystals. Fiz. Tverdogo Tela. 2001. V. 43. №3. P. 427-430

1. Active Member of New-York Academy of Sciences (1997)

2. Member of Expert Croup at American Biographic Institute (2001)

Institute of Physics of ANAS, 33, H.Javid ave., Baku, Azerbaijan, Az-1143