1)Preparation and investigations of Electric Properties of Cu₂S (Se) single crystals and films. From voltage-current characteristics it was established, that switching and memory effects takes place.
2)The one phase Cu₂O samples by high temperature oxidation with electric resistivity q=1+2·10 Ohm.sm are prepared. It is established, that electric parameters of the one phase Cu₂O samples, annealed in air and vacuum, have very small changes.
3)MOS-structures on the base of CdS were prepared by the method of deposition of from solution on heat substrate. It was established from voltage-current characteristics, that switching effect with stable and reproduced low and high-conductivity states takes place.
4)Preparation of p-type CdS polycrystals and p-type CdS films, their electro-physical properties and effect of heat-treatment on electrical and photo-electrical properties have been described.
5)Investigations on nature of Electronic process and Negative Photo-conductivity in Cd1-xZnxS (o<x<0,6) films deposited from the solution. On noise and frequency characteristics of Cd1-xZnxS films for two measurement frequencies it is established that relations; for 10+30Hz-relation 1/f-type and for 10Hz-generation-recombination relation;
6)Photomemory effect in high-resistance photosensitive CdS:Cu single crystals.
7)Long-term relaxation stimulated effects in high-resistance monocrystals CdS:Cu. 8)Material for optic filters in the JR band (8+20mm) has been produced from high-resistivity (~10sm) n-type CdS. In order to increase its JR transmittance and cut off short-wave radiation, the material is doped with 3.5-7 wt. % of copper. In the 8+20mm band the transmittance is 50-60%, absorption in the 2-6mm band is very high in samples ~2mm thick. If the thickness is reduced to 1,2mm, the transmittance in the desired band rises to 80% and the absorption in the 2-6mm band is practically complete.

of candidates:

1. Investigations of the Electric Properties of Cu2S single crystals. J.Phys. Stat. sol. 26. 65, 1968, JDP

2. Negative Photoconductivity in Cd1-x ZnxS Films Deposited from the solution, "Turkish Journal of Physics, v.20, N7, 1996, pp.794-800

3. Effect of Heat treatment of Electro physical and Photoelectrical properties of p-type CdS Polycrystals. Semiconductor Science and Technology Ins. of Phys. Publishing, Bristol, London, Philodelp., Paris, St. Peterburg,12, SSt/ABC, 1999, 1234-1239

4. Электрические свойства некоторых халькогенидов в контакте с металлом. УФН, т.99, вып.3, 1969, 505

5. Термографические исследования сульфидов меди., Изв. АНСССР "Неорганические материалы" №7, т.15, 1979, 1165-1167