| Phone: | (994 12) 394057 |
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| E-mail: | ||
| Head of structural unit: | Elmira
Asad gizi Jafarova |
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| Total number of employees: | 10 |
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| Main area of activity of the structural unit: | Investigation on nonequilibrium electronic processes in heterostructures on basis Si and chalgenide semiconductors. Influence of radiation on their physical properties. Obtaining of thinfilm solar cells on a chalcogenide semiconductors and investigation on their properties. Diffusion processes and formation of defects in solid states. Investigation on influence laser irradiation and radiation semiconductors and opitaxsial structures. |
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| Main scientific achievements of the structural unit: | The method of deep levels transient spectroscopy there were investigated the deep levels of nickel in silicon. Parameters of these levels and their nature are determined. It is shown, that: a) at evaporating on surface silicon of solar cells of two layer coats ZnS + Na2O3the magnification of a photoelectric at 60%, efficiency =15% (for solar cells without a coat h=9,3%) is observed; b) in thin film solar transformers on a basis nCdS-pCdTe, obtained by a method vacuum evaporation in quasi-closed volume, effectency = 9,6% and I= 22mA/cm2. |

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