Gusnu Khalil oglu Azdharov
Doctor of Physical and Mathematical Sciences, Professor

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Growth and electronic properties of impurity-depod diamond-like semiconductors.

Special features of the electronic properties of impurity-doped Ge-Si alloy crystals due to composition and structure of different nanovolume surroundings of the defect core have been observed.

The ground-state energy spectrum of wide range deep and shallow impurities in Ge-Si alloys has been experimentally determined.

Expressions for alloy and phonon scattering are derived for electrons holes in Ge-Si single crystal.

New techniques have been developed to grow impurity-doped alloy crystal from the melt with desired composition and impurity distribution.

Under the extreme quantum limit conditions in a longitudinal magnetic field and when impurity scattering predominates a large negative magneto resistance in III-V semi conducting  compounds is observed.