Emil Kamil oglu Huseynov
Doctor of Physical and Mathematical Sciences, Professor

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Development of scientific bases of technological processes for creation of high-effective infrared detectors and photoreceiver devices (3-5 µm and 8-14 µm) on the basis of narrow-gap semiconductors (ZnSb, Cd_xHg_1-xTe, Pb_1-xSn_xTe, etc.) and investigation of photoelectrical properties of structures maded on the basis of these materials.

1. The creation of the modern investigation and technological bases for manufacturing of high-sensitive infrared detectors.

2. Different technological processes have been developed and different types of detectors and multielement low-dimensional matrix structures on the basis of ZnSb and Cd_xHg_1-xTe for 3-5 µm and 8-14 µm have been created for citizen and special application.