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Place of Birth: |
Sheki city, Azerbaijan Republic |
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Date of Birth: |
05.09.1949 |
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Education: |
Azerbaijan State University, physicist |
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Scientific degree: |
Doctor of Physical and Mathematical Sciences |
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Title: |
professor |
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Speciality code and title for doctoral
dissertation : |
01.04.10-Physics of semiconductors
and dielectrics |
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Total number of scientific publications: |
120, 1 monograph |
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Number of scientific publications printed
abroad: |
15 |
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Number of patents and certificates of
authorship: |
8 |
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Main scientific achievements: |
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Influence of γ and accelerated electron's rays to the
characteristics of diodes, photo receivers, photo elements with single
and double surface based on Ge -Si solid solution was studied and
practical proposals on their radiation resistance were given.
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It was revealed that radiation resistance of photo devices based on
Ge-Si solid solution (electron rays with 5 MeV energy, protons with
200-400 kev) is more than the devices based on Si and Ga As.
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Prepared: |
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| of candidates: |
5 |
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Titles of main five scientific
publications: |
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Madatov R.S., Bakirov M. Ya., Mamedov V. S.,
Nadjafov B. A. Electrical and optical property of amorphous
films Ge Si., DAN Az. SSR, 1989, v. 54, 2,. p. 45-48
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Madatov R.S., Mustafayev Yu. M., Bakirov M.
Ya. phototransformer based on Ge Si monocrystal. Geliotekhnika
987, № 1, p. 18-21
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Madatov R.S., Bakirov M. Ya., Gabulov I., A.
Influence of radiation to photoelectrical property of Ge Si .
Mat. Sov. coord. sovesh. Baku. October 1988, p. 125-128
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Position: |
Head of Laboratory |
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Pedagogical
activity: |
National Aviation Academy, department of physics |
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Place of work and its address: |
Institute of Radiation Problems of ANAS,
B.Vakhabzadeh str.,9, AZ1143, Azerbaijan Republic |
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Office phone: |
(994 12) 5383224 |
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Home phone: |
(994 12) 4924906 |
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E-mail:
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msrahim@rambler.ru |
Structure