| Phone: | (994 12) 5383224; (994 12) 5393389 |
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| Fax: | (994 12) 5398318 |
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| Head of structural unit: |
Rauf
Madat oglu Sardarly |
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| Main area of activity of the structural unit: |
A3B3C62 semiconductor compositions obtaining of relaxor ferroelectrics' dielectric, polarization, piroelectric, studying and obtaining of electric properties and investigation of external factors' (γ-rays, electric field, temperature and others) influence to these properties. |
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| Main scientific achievements of the structural unit: |
Complex investigation of γ-irradiated TlInS crystals gives opportunity to make contact between dynamics of relaxors' behaviour in which relaxor state forms at the result of heterogeneous distribution in nano-regions due to the localization of electric charges at defects with electric conductivity which has hopping character and is conditioned by thermoactive processes of defect levels. On the base of conducted investigations dielectric and electric parameters of irradiated TlInS crystals were determined. It was established that by influencing the electronic subsystems the dielectric properties of relaxors can be changed. It is supposed that charge transfer in the temperature range of a stable relaxor state is connected with by tunneling of the quantum dot from electron layers through the potential barriers generated by the superlattice of the TIInS2 crystal. |

Institute of Information Technology of ANAS