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Institute of Radiation Problems
Laboratory of
Radiation Physics of Devices
| Phone: | (994 12) 5383224; (994 12) 5393389 |
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| Fax: | (994 12) 5398318 |
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| Head of structural unit: |
Doctor of Physical and Mathematical Sciences |
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| Main area of activity of the structural unit: |
Study of radiation defects' formation process in lamellar monocrystals Ge/Ge1-xSix (x=0/0.15) under the influence of high energy accelerated electrons and γ-quanta and obtaining of modified thin films due to their electro-physical, optic and photoelectric properties; Fabrication of radiation-resistant optic devices and strain gauges working in increased radiation level on the base of obtained monocrystals. |
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| Main scientific achievements of the structural unit: |
It was determined that photosensitivity Φ=5 ·1015 El/sm2 of n-Ge/Ge1-xSix epitaxial films increases at the temperature of liquid nitrogen (77K) irradiated by integrated flux. |

Institute of Information Technology of ANAS